, u na. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 silicon npn power transistor 2SC2344 description ? low collector saturation voltage- : vce(satr 0.3v(typ.)@ lc= 0.5a ? collector-emitter breakdown voltage- : v(br)ceo= 160v(min.) ? complement to type 2sa1011 applications ? designed for high-voltage switching, audio frequency power amplifiers, 100w output predriver applications. absolute maximum ratings(ta=25'c) w^ \'\'-\n 1.base 2. collect or 3.bw1itter to-220c package symbol vcbo vceo vebo ic icm pc tj tstg parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current-continuous collector current-peak total power dissipation? tc=25c junction temperature storage temperature range value 180 160 6 1.5 3.0 25 150 -55-150 unit v v v a a w "c c silicon npn power transistor 2SC2344 electrical characteristics tc=25'c unless otherwise specified symbol v(br)ceo v(br)cbo v(br)ebo vce(sat) vee(on) icbo iebo hfe ft cob parameter collector-emitter breakdown voltage collector-base breakdown voltage emitter-base breakdown voltage collector-emitter saturation voltage base-emitter on voltage collector cutoff current emitter cutoff current dc current gain current-gain ? bandwidth product output capacitance conditions lc= 1ma; rbe= lc= 1ma; ie=0 ie= 10ma; lc=0 lc= 0.5a; ib= 50ma lc=10ma;vce=5v vcb=120v; ie=0 veb= 4v; lc= 0 lc= 0.3a; vce= 5v lc= 50ma ;vce= 10v le=0;vcb=10v;ftest= 1.0mhz min 160 180 6 60 typ. 0.5 1.5 100 23 max 10 10 200 unit v v v v v u a m a mhz pf switching times ton tstg tf turn-on time storage time fall time lc= 0.5a, ib1= -\b2= 50ma 0.15 0.81 0.48 m s m s m s classifications d 60-120 e 100-200
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